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  • 浙东物理前沿讲坛第59讲:First-principles Study of Band Structure Engineering and Defect Control in Semiconductors
  • 发布时间:2021年07月22日 19:54 作者: 
  • 报告时间:202172908:30-11:30

    报告地点:阶三教室

    讲座人:魏苏淮

    报告摘要:First-principles study of semiconductor materials plays an important role in developing clean energy and information technologies because it can provide useful physical insights, fresh perspective and new design principles for developing innovative semiconductor materials with high performance. One of the most important issues in studyingsemiconductormaterial is to accurately calculate its band structure, predict its defect properties, and continuously tune its material properties, e.g., through alloying. In this talkI will discuss how the development of theoretical first-principles calculation methods can be used to better understand and improve the performanceofsemiconductor materials with the focus on the calculation methodsfor alloys and defects.

    个人简介:

    魏苏淮,男,195710月生,1981年于复旦大学获学士学位,1985年于美国威廉玛丽学院获理学博士学位1985年至2015年,在美国国家可再生能源实验室NREL)工作,担任过理论研究室主任、国家实验室Fellow 。现任北京计算科学研究中心教授,材料能源研究部主任,美国物理学会会士,美国材料学会会士。



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